On DRAM Rowhammer and the Physics of Insecurity

The dynamic random access memory (DRAM) disturb known as rowhammer (RH) has come to dominate the insecurity of computing systems worldwide. Several studies have concentrated on electron injection from a switching cell select transistor and capture by nearby storage node junctions being main mechanism for effect. This article first time looks in-depth at RH point view both capture, capacitive crosstalk. absence such comprehensive silicon level in literature can be attributed its sensitive nature within industry highlights difficulty DRAM scaling. review article, therefore, forms broad foundation extend understanding this dangerous so doing provides an informed ability future technologies solve once all.